Search

Product

Domestic professional research and development manufacturer of semiconductor devices

Product
Current Location： Home >> Product >> Discrete Device >> Insulated Gate Bipolar Transistor(IGBT)
Product

Insulated Gate Bipolar Transistor(IGBT)

云开·kaiyun(中国)体育官方网站型号PDICVCESVCE(sat)VGE(th)管脚排列封装
TYPE(W)(A)(V)(V)IC(A)VGE (V)VCE(V)IC(mA)MIN.MAX.LEAD ARRANGINGPackage
clear
208 20 1200 2.4 10 15 15 0.4 5.2 6.5 GCE TO-3P
186 30 1200 2.5 15 15 15 15 3.5 7.5 GCE TO-3P
240 40 1200 2.5 20 15 15 15 3.5 7.5 GCE TO-3P
312 50 1200 2.5 25 15 15 15 3.5 7.5 GCE TO-3P
310 120 650 2.2 60 15 15 0.8 5.3 6.3 GCE TO-3P
310 120 600 2.9 60 15 - 0.5 4 6 GCE TO-3P
150 30 1200 2.5 15 15 15 0.6 4.5 6.5 GCE TO-247
350 50 1200 2.45 25 15 15 0.6 4.5 6.5 GCE TO-247
69 12 650 1.98 6 15 5 1 5.3 5.3 GCE TO-252
Total: 9 Page 1/1
© All rights reserved. Foshan Blue Rocket Electronics Co.,Ltd. Copyright
ICP：粤ICP备05006949
乐竞体育（中国）官方网站 | 新利体育luck | 华球体育（China）官方网站 | 江南平台 | 皇家体育（China）官方网站 | 欧博app(中国)官方网站IOS/安卓通用版/手机APP | 易倍体育 | 乐竞中国 | 乐动网页版 |